60V,Drain to Source Voltage (Vdss)
55nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO4421 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 60V 6.2A (Ta) 40 mOhm @ 6.2A, 10V 3V @ 250µA 55nC @ 10V 2900pF @ 30V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTP5863NG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 97A (Tc) 7.8 mOhm @ 20A, 10V 4V @ 250µA 55nC @ 10V 3200pF @ 25V 150W Through Hole TO-220-3
AOT2608L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 60V 11A (Ta), 72A (Tc) 8 mOhm @ 20A, 10V 3.6V @ 250µA 55nC @ 10V 2995pF @ 30V 2.1W Through Hole TO-220-3
AOB2608L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 60V 11A (Ta), 72A (Tc) 7.6 mOhm @ 20A, 10V 3.6V @ 250µA 55nC @ 10V 2995pF @ 30V 2.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ATP113-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 25A (Ta) 29.5 mOhm @ 18A, 10V - 55nC @ 10V 2400pF @ 20V 50W Surface Mount ATPAK (2 leads+tab)
SUP60N06-12P-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 12 mOhm @ 30A, 10V 4.5V @ 250µA 55nC @ 10V 1970pF @ 30V 3.25W Through Hole TO-220-3
SUP60N06-12P-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 12 mOhm @ 30A, 10V 4.5V @ 250µA 55nC @ 10V 1970pF @ 30V 3.25W Through Hole TO-220-3