60V,Drain to Source Voltage (Vdss)
50nC @ 10V,Gate Charge (Qg) @ Vgs
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSZ076N06NS3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 7.6 mOhm @ 20A, 10V 4V @ 35µA 50nC @ 10V 4000pF @ 30V 69W Surface Mount 8-PowerVDFN
BSC076N06NS3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 50A 7.6 mOhm @ 50A, 10V 4V @ 35µA 50nC @ 10V 4000pF @ 30V 69W Surface Mount 8-PowerTDFN
IRF6648TR1PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 2.8W Surface Mount -
IRF6648 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 2.8W Surface Mount -
IRF6648TR1 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 2.8W Surface Mount -
IRF6648TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 2.8W Surface Mount -
NTB25P06T4G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB25P06T4G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 27.5A (Ta) 82 mOhm @ 25A, 10V 4V @ 250µA 50nC @ 10V 1680pF @ 25V 120W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MTP23P06V ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 23A (Tc) 120 mOhm @ 11.5A, 10V 4V @ 250µA 50nC @ 10V 1620pF @ 25V 90W Through Hole TO-220-3
MTP36N06V ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 32A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 50nC @ 10V 1700pF @ 25V 90W Through Hole TO-220-3