60V,Drain to Source Voltage (Vdss)
43nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQB27P06TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP27P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 120W Through Hole TO-220-3
FQP27P06_SW82127 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 120W Through Hole TO-220-3
FQPF27P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 17A 70 mOhm @ 8.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 47W Through Hole TO-220-3 Full Pack
FDP65N06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 65A (Tc) 16 mOhm @ 32.5A, 10V 4V @ 250µA 43nC @ 10V 2170pF @ 25V 135W Through Hole TO-220-3
FQI27P06TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 3.75W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
CSD18531Q5A TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 60V 19A (Ta), 100A (Tc) 4.6 mOhm @ 22A, 10V 2.3V @ 250µA 43nC @ 10V 3840pF @ 30V 3.1W Surface Mount 8-PowerTDFN