| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMQ86530L | FAIRCHILD SEMICONDUCTOR CORP | 4 N-Channel (H-Bridge) | 60V | 8A | 17.5 mOhm @ 8A, 10V | 3V @ 250µA | 33nC @ 10V | 2295pF @ 30V | 1.9W | Surface Mount | 12-WDFN Exposed Pad | |
| FDP5690 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 32A (Tc) | 27 mOhm @ 16A, 10V | 4V @ 250µA | 33nC @ 10V | 1120pF @ 25V | 58W | Through Hole | TO-220-3 | |
| FDB5690 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 32A (Tc) | 27 mOhm @ 16A, 10V | 4V @ 250µA | 33nC @ 10V | 1120pF @ 25V | 58W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SPD18P06P G | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 18.6A | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 80W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| BSP613P | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 1.8W | Surface Mount | TO-261-4, TO-261AA | |
| SPU18P06P | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 80W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| BSP613P L6327 | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 1.8W | Surface Mount | TO-261-4, TO-261AA | |
| SPD18P06P | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 80W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| BSC110N06NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A (Tc) | 11 mOhm @ 50A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 50W | Surface Mount | 8-PowerTDFN | |
| BSZ110N06NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 20A (Tc) | 11 mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | 2700pF @ 30V | 50W | Surface Mount | 8-PowerVDFN |
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