60V,Drain to Source Voltage (Vdss)
3.57nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSS83PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 330mA (Ta) 2 Ohm @ 330mA, 10V 2V @ 80µA 3.57nC @ 10V 78pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS83PL6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 330mA (Ta) 2 Ohm @ 330mA, 10V 2V @ 80µA 3.57nC @ 10V 78pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS83P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 330mA (Ta) 2 Ohm @ 330mA, 10V 2V @ 80µA 3.57nC @ 10V 78pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS83P H6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 330mA (Ta) 2 Ohm @ 330mA, 10V 2V @ 80µA 3.57nC @ 10V 78pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3