IPD079N06L3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
50A
|
7.9 mOhm @ 50A, 10V
|
2.2V @ 34µA
|
29nC @ 4.5V
|
4900pF @ 30V
|
79W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IPB081N06L3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
50A
|
8.1 mOhm @ 50A, 10V
|
2.2V @ 34µA
|
29nC @ 4.5V
|
4900pF @ 30V
|
79W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IPP084N06L3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
50A (Tc)
|
8.4 mOhm @ 50A, 10V
|
2.2V @ 34µA
|
29nC @ 4.5V
|
4900pF @ 30V
|
79W
|
Through Hole
|
TO-220-3
|
RJK0652DPB-00#J5 |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
35A (Ta)
|
7 mOhm @ 17.5A, 10V
|
-
|
29nC @ 4.5V
|
4100pF @ 10V
|
55W
|
Surface Mount
|
SC-100, SOT-669
|