| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB120N06S4-H1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 250W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB180N06S4-H1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 250W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| IPI120N06S4-H1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 250W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPP120N06S4-H1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 2.4 mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | 250W | Through Hole | TO-220-3 | |
| SQM110P06-07L-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 120A (Tc) | 6.7 mOhm @ 30A, 10V | 2.5V @ 250µA | 270nC @ 10V | 14280pF @ 25V | 375W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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