60V,Drain to Source Voltage (Vdss)
240nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SUP90P06-09L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 90A (Tc) 9.3 mOhm @ 30A, 10V 3V @ 250µA 240nC @ 10V 9200pF @ 25V 2.4W Through Hole TO-220-3
SUM110P06-08L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 110A (Tc) 8 mOhm @ 30A, 10V 3V @ 250µA 240nC @ 10V 9200pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB