60V,Drain to Source Voltage (Vdss)
23nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDS9958 FAIRCHILD SEMICONDUCTOR CORP
2 P-Channel (Dual) 60V 2.9A 105 mOhm @ 2.9A, 10V 3V @ 250µA 23nC @ 10V 1020pF @ 30V 900mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTD5865NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 43A (Tc) 18 mOhm @ 20A, 10V 4V @ 250µA 23nC @ 10V 1261pF @ 25V 52W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76413DK8T FAIRCHILD SEMICONDUCTOR CORP
2 N-Channel (Dual) 60V 5.1A 49 mOhm @ 5.1A, 10V 3V @ 250µA 23nC @ 10V 620pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
PSMN011-60MSX NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 61A (Tmb) 11.3 mOhm @ 15A, 10V 1V @ 1mA 23nC @ 10V 1368pF @ 30V 91W Surface Mount SOT1210, 8-LFPAK33 (5-Lead)
NTD5865N-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 43A (Tc) 18 mOhm @ 20A, 10V 4V @ 250µA 23nC @ 10V 1261pF @ 25V 52W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NP15P06SLG-E1-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 60V 15A (Ta) 70 mOhm @ 7.5A, 10V 2.5V @ 250µA 23nC @ 10V 1100pF @ 10V 1.2W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TK40E06N1,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 40A (Ta) 10.4 mOhm @ 20A, 10V 4V @ 300µA 23nC @ 10V 1700pF @ 30V 67W Through Hole TO-220-3