60V,Drain to Source Voltage (Vdss)
16nC @ 10V,Gate Charge (Qg) @ Vgs
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NVTFS5826NLTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 7.6A (Ta) 24 mOhm @ 10A, 10V 2.5V @ 250µA 16nC @ 10V 850pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
SFT1446-TL-H ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 20A 51 mOhm @ 10A, 10V 2.6V @ 1mA 16nC @ 10V 750pF @ 20V 1W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1446-H ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 20A 51 mOhm @ 10A, 10V 2.6V @ 1mA 16nC @ 10V 750pF @ 20V 1W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
TK30E06N1,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 43A (Ta) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 53W Through Hole TO-220-3
NVTFS5826NLTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 7.6A (Ta) 24 mOhm @ 10A, 10V 2.5V @ 250µA 16nC @ 10V 850pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
RJK0657DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 60V 20A 13.6 mOhm @ 10A, 10V - 16nC @ 10V 1000pF @ 10V 45W Surface Mount 8-WFDFN Exposed Pad
DKI06261 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 60V 25A (Tc) 21.2 mOhm @ 12.5A, 10V 2.5V @ 250µA 16nC @ 10V 1050pF @ 25V 32W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
GKI06259 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 21 mOhm @ 12.5A, 10V 2.5V @ 250µA 16nC @ 10V 1050pF @ 25V 3.1W Surface Mount 8-TDFN Exposed Pad
FKI06269 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 60V 24A (Tc) 21.8 mOhm @ 15.8A, 10V 2.5V @ 250µA 16nC @ 10V 1050pF @ 25V 29W Through Hole TO-220-3 Full Pack
TK30A06N1,S4X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 25W Through Hole TO-220-3 Full Pack