60V,Drain to Source Voltage (Vdss)
165nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS86500L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 25A (Ta), 80A (Tc) 2.5 mOhm @ 25A, 10V 3V @ 250µA 165nC @ 10V 12530pF @ 30V 2.5W Surface Mount 8-TDFN Exposed Pad
IPB029N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A 2.9 mOhm @ 100A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 188W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPA032N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 84A (Tc) 3.2 mOhm @ 80A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 41W Through Hole TO-220-3 Full Pack
IPP032N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 188W Through Hole TO-220-3
IPB029N06N3 G E8187 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 188W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI032N06N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 188W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SUD50P06-15L-T4-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 50A (Tc) 15 mOhm @ 17A, 10V 3V @ 250µA 165nC @ 10V 4950pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P06-15-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 50A (Tc) 15 mOhm @ 17A, 10V 3V @ 250µA 165nC @ 10V 4950pF @ 25V 113W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P06-15L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 50A (Tc) 15 mOhm @ 17A, 10V 3V @ 250µA 165nC @ 10V 4950pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63