IPB120N06S4-03 |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
120A (Tc)
|
2.8 mOhm @ 100A, 10V
|
4V @ 120µA
|
160nC @ 10V
|
13150pF @ 25V
|
167W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IPI120N06S4-03 |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
120A (Tc)
|
3.2 mOhm @ 100A, 10V
|
4V @ 120µA
|
160nC @ 10V
|
13150pF @ 25V
|
167W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
IPP120N06S4-03 |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
120A (Tc)
|
3.2 mOhm @ 100A, 10V
|
4V @ 120µA
|
160nC @ 10V
|
13150pF @ 25V
|
167W
|
Through Hole
|
TO-220-3
|
NP82N06NLG-S18-AY |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
82A (Tc)
|
7.4 mOhm @ 41A, 10V
|
2.5V @ 250µA
|
160nC @ 10V
|
8550pF @ 25V
|
1.8W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
NP82N06MLG-S18-AY |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
82A (Tc)
|
7.4 mOhm @ 41A, 10V
|
2.5V @ 250µA
|
160nC @ 10V
|
8550pF @ 25V
|
1.8W
|
Through Hole
|
TO-220-3
|
STP60NE06-16 |
STMICROELECTRONICS |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
60A (Tc)
|
16 mOhm @ 30A, 10V
|
4V @ 250µA
|
160nC @ 10V
|
6200pF @ 25V
|
150W
|
Through Hole
|
TO-220-3
|
SI7478DP-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
15A (Ta)
|
7.5 mOhm @ 20A, 10V
|
3V @ 250µA
|
160nC @ 10V
|
-
|
1.9W
|
Surface Mount
|
PowerPAK® SO-8
|
IRFP054PBF |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
70A (Tc)
|
14 mOhm @ 54A, 10V
|
4V @ 250µA
|
160nC @ 10V
|
4500pF @ 25V
|
230W
|
Through Hole
|
TO-247-3
|
SUP90N06-5M0P-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
90A (Tc)
|
5 mOhm @ 20A, 10V
|
4.5V @ 250µA
|
160nC @ 10V
|
6190pF @ 30V
|
3.75W
|
Through Hole
|
TO-220-3
|
IRFP054 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
70A (Tc)
|
14 mOhm @ 54A, 10V
|
4V @ 250µA
|
160nC @ 10V
|
4500pF @ 25V
|
230W
|
Through Hole
|
TO-247-3
|