60V,Drain to Source Voltage (Vdss)
135nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDB5800 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 14A (Ta), 80A (Tc) 6 mOhm @ 80A, 10V 2.5V @ 250µA 135nC @ 10V 6625pF @ 15V 242W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB5800_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 14A (Ta), 80A (Tc) 6 mOhm @ 80A, 10V 2.5V @ 250µA 135nC @ 10V 6625pF @ 15V 242W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2SK4171 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 7.2 mOhm @ 50A, 10V - 135nC @ 10V 6900pF @ 20V 1.75W Through Hole TO-220-3
NP90N06VLG-E1-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 60V 90A (Tc) 7.8 mOhm @ 45A, 10V 2.5V @ 250µA 135nC @ 10V 6900pF @ 25V 1.2W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SI7138DP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 7.8 mOhm @ 19.7A, 10V 4V @ 250µA 135nC @ 10V 6900pF @ 30V 96W Surface Mount PowerPAK® SO-8
SI7138DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 7.8 mOhm @ 19.7A, 10V 4V @ 250µA 135nC @ 10V 6900pF @ 30V 96W Surface Mount PowerPAK® SO-8