| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC031N06NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 3.1 mOhm @ 50A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 139W | Surface Mount | 8-PowerTDFN | |
| IPD034N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 167W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPB034N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 3.4 mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | 167W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| IRF1010ESTRLPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRF1010EPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Through Hole | TO-220-3 | |
| IRF1010EL | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF1010ESTRR | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN3R0-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 306W | Through Hole | TO-220-3 | |
| PSMN3R0-60ES,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tmb) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 306W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN3R0-60BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tmb) | 3.2 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 306W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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