60V,Drain to Source Voltage (Vdss)
120nC @ 10V,Gate Charge (Qg) @ Vgs
136W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SQR50N06-07L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 7.6 mOhm @ 20A, 10V 2.5V @ 250µA 120nC @ 10V 5570pF @ 25V 136W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQD50N06-07L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 7.6 mOhm @ 20A, 10V 2.5V @ 250µA 120nC @ 10V 5570pF @ 25V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63