| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP020N06N | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 29A (Ta), 120A (Tc) | 2 mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | 7800pF @ 30V | 3W | Through Hole | TO-220-3 | |
| IPI020N06N | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 29A (Ta), 120A (Tc) | 2 mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | 7800pF @ 30V | 3W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPB014N06N | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 34A (Ta), 180A (Tc) | 1.4 mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | 7800pF @ 30V | 3W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| NP82N06PDG-E1-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 82A (Tc) | 6.7 mOhm @ 41A, 10V | 2.5V @ 250µA | 106nC @ 10V | 5700pF @ 25V | 1.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SQJ460EP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 32A (Tc) | 9.6 mOhm @ 18A, 10V | 2.5V @ 250µA | 106nC @ 10V | 4795pF @ 25V | 83W | Surface Mount | PowerPAK® SO-8 |
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