| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AO4260 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 60V | 18A (Ta) | 5.2 mOhm @ 18A, 10V | 2.4V @ 250µA | 100nC @ 10V | 4940pF @ 30V | 3.1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| AOB411L | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET P-Channel, Metal Oxide | 60V | 8A (Ta), 78A (Tc) | 16.5 mOhm @ 20A, 10V | 2.5V @ 250µA | 100nC @ 10V | 6400pF @ 30V | 2.1W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NDP7061 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 64A (Tc) | 16 mOhm @ 35A, 10V | 4V @ 250µA | 100nC @ 10V | 1930pF @ 25V | 130W | Through Hole | TO-220-3 | |
| IRFH5006TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 21A (Ta), 100A (Tc) | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | 4175pF @ 30V | 3.6W | Surface Mount | 8-PowerVQFN | |
| IRFH5006TR2PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 21A (Ta), 100A (Tc) | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | 4175pF @ 30V | 3.6W | Surface Mount | 8-PowerVQFN | |
| NP50P06SDG-E1-AY | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 60V | 50A (Tc) | 16.5 mOhm @ 25A, 10V | 2.5V @ 250µA | 100nC @ 10V | 5000pF @ 10V | 1.2W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STB200N6F3 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 3.6 mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 330W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STP200N6F3 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tc) | 3.9 mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 330W | Through Hole | TO-220-3 | |
| SI7460DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 11A | 9.6 mOhm @ 18A, 10V | 3V @ 250µA | 100nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 | |
| SI7460DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 9.6 mOhm @ 18A, 10V | 3V @ 250µA | 100nC @ 10V | - | 1.9W | Surface Mount | PowerPAK® SO-8 |
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