60V,Drain to Source Voltage (Vdss)
4V @ 500µA,Vgs(th) (Max) @ Id
110W,Power - Max
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK58E06N1,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 58A (Ta) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 110W Through Hole TO-220-3