60V,Drain to Source Voltage (Vdss)
3V @ 250µA,Vgs(th) (Max) @ Id
2.4W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMA86551L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 7.5A (Ta) 23 mOhm @ 7.5A, 10V 3V @ 250µA 17nC @ 10V 1235pF @ 30V 2.4W Surface Mount 6-WDFN Exposed Pad
SUP90P06-09L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 90A (Tc) 9.3 mOhm @ 30A, 10V 3V @ 250µA 240nC @ 10V 9200pF @ 25V 2.4W Through Hole TO-220-3
SI4946BEY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 60V 6.5A 41 mOhm @ 5.3A, 10V 3V @ 250µA 25nC @ 10V 840pF @ 30V 2.4W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI9945AEY-T1 VISHAY SILICONIX
2 N-Channel (Dual) 60V 3.7A 80 mOhm @ 3.7A, 10V 3V @ 250µA 20nC @ 10V - 2.4W Surface Mount 8-SOIC (0.154", 3.90mm Width)