60V,Drain to Source Voltage (Vdss)
7 mOhm @ 80A, 10V,Rds On (Max) @ Id, Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDP070AN06A0 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 15A (Ta), 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 250µA 66nC @ 10V 3000pF @ 25V 175W Through Hole TO-220-3
FDB070AN06A0_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 15A (Ta) 7 mOhm @ 80A, 10V 4V @ 250µA 66nC @ 10V 3000pF @ 25V 175W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB070AN06A0 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 80A 7 mOhm @ 80A, 10V 4V @ 250µA 66nC @ 10V 3000pF @ 25V 175W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP070N06L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7 mOhm @ 80A, 10V 2V @ 150µA 126nC @ 10V 4300pF @ 30V 214W Through Hole TO-220-3
IPP070N06N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 180µA 118nC @ 10V 4100pF @ 30V 250W Through Hole TO-220-3
IPI070N06N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7 mOhm @ 80A, 10V 4V @ 180µA 118nC @ 10V 4100pF @ 30V 250W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA