60V,Drain to Source Voltage (Vdss)
500 mOhm @ 1.1A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFL9014PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.8A (Tc) 500 mOhm @ 1.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL9014TRPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.8A (Tc) 500 mOhm @ 1.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL9014 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.8A (Tc) 500 mOhm @ 1.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 2W Surface Mount TO-261-4, TO-261AA
IRFL9014TR VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.8A (Tc) 500 mOhm @ 1.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 2W Surface Mount TO-261-4, TO-261AA