60V,Drain to Source Voltage (Vdss)
50 mOhm @ 18A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFZ34PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 88W Through Hole TO-220-3
IRFZ34STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 88W Through Hole TO-220-3
IRFZ34L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 3.7W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRFZ34S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRCZ34PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1300pF @ 25V 88W Through Hole TO-220-5