| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN4R6-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | 4426pF @ 30V | 211W | Through Hole | TO-220-3 | |
| BUK7E4R6-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | 234W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK754R7-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | 234W | Through Hole | TO-220-3 |
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