Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK9E3R7-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Ta) | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | 13490pF @ 25V | 293W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
BUK953R5-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Ta) | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | 13490pF @ 25V | 293W | Through Hole | TO-220-3 | |
PSMN3R3-60PLQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 130A (Tmb) | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | 10115pF @ 25V | 293W | Through Hole | TO-220-3 | |
CSD18532NQ5B | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 60V | 22A (Ta), 100A (Tc) | 3.4 mOhm @ 25A, 10V | 3.4V @ 250µA | 64nC @ 10V | 5340pF @ 30V | 3.2W | Surface Mount | 8-VDFN |