60V,Drain to Source Voltage (Vdss)
3.4 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9E3R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 13490pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK953R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 13490pF @ 25V 293W Through Hole TO-220-3
PSMN3R3-60PLQ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 130A (Tmb) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 10115pF @ 25V 293W Through Hole TO-220-3
CSD18532NQ5B TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 60V 22A (Ta), 100A (Tc) 3.4 mOhm @ 25A, 10V 3.4V @ 250µA 64nC @ 10V 5340pF @ 30V 3.2W Surface Mount 8-VDFN