60V,Drain to Source Voltage (Vdss)
28 mOhm @ 31A, 10V,Rds On (Max) @ Id, Vgs
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFZ40PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 150W Through Hole TO-220-3
IRFZ44RPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 150W Through Hole TO-220-3
IRFZ44SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 150W Through Hole TO-220-3
IRFZ44STRRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ40 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 150W Through Hole TO-220-3
IRFZ44R VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 150W Through Hole TO-220-3
IRFZ44S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ44STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 67nC @ 10V 1900pF @ 25V 3.7W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB