60V,Drain to Source Voltage (Vdss)
22 mOhm @ 6A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4850EY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 22 mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V - 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4850EY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 22 mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V - 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SQ4850EY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 12A (Tc) 22 mOhm @ 6A, 10V 2.5V @ 250µA 30nC @ 10V 1250pF @ 25V 6.8W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4850EY-T1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 22 mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V - 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)