60V,Drain to Source Voltage (Vdss)
200 mOhm @ 4.6A, 10V,Rds On (Max) @ Id, Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFR014TRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU014PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRFR014TRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014TR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU014 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRFR014TRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014TRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7.7A (Tc) 200 mOhm @ 4.6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63