60V,Drain to Source Voltage (Vdss)
14 mOhm @ 30A, 10V,Rds On (Max) @ Id, Vgs
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTB60N06T4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB60N06T4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP65NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 14 mOhm @ 30A, 10V 4V @ 250µA 75nC @ 10V 1700pF @ 25V 110W Through Hole TO-220-3
STP60NF06L STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 14 mOhm @ 30A, 10V 1V @ 250µA 66nC @ 4.5V 2000pF @ 25V 110W Through Hole TO-220-3
STB60NF06LT4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 14 mOhm @ 30A, 10V 1V @ 250µA 66nC @ 4.5V 2000pF @ 25V 110W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTP60N06 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Through Hole TO-220-3
NTP60N06G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Through Hole TO-220-3
NTB60N06G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 2.4W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTB5412NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 14 mOhm @ 30A, 10V 4V @ 250µA 85nC @ 0V 3220pF @ 25V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTP5412NG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 60A (Tc) 14 mOhm @ 30A, 10V 4V @ 250µA 85nC @ 0V 3220pF @ 25V 125W Through Hole TO-220-3