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60V,Drain to Source Voltage (Vdss)

100 mOhm @ 1.5A, 10V,Rds On (Max) @ Id, Vgs

5 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

STN4NF06L STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 60V 4A (Tc) 100 mOhm @ 1.5A, 10V 2.8V @ 250µA 9nC @ 5V 340pF @ 25V 3.3W Surface Mount TO-261-4, TO-261AA

STN3NF06 STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 60V 4A (Tc) 100 mOhm @ 1.5A, 10V 4V @ 250µA 13nC @ 10V 315pF @ 25V 3.3W Surface Mount TO-261-4, TO-261AA

STN3NF06L STMICROELECTRONICS

MOSFET N-Channel, Metal Oxide 60V 4A (Tc) 100 mOhm @ 1.5A, 10V 2.8V @ 250µA 9nC @ 5V 340pF @ 25V 3.3W Surface Mount TO-261-4, TO-261AA

IRFD024PBF VISHAY SILICONIX

MOSFET N-Channel, Metal Oxide 60V 2.5A (Ta) 100 mOhm @ 1.5A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)

IRFD024 VISHAY SILICONIX

MOSFET N-Channel, Metal Oxide 60V 2.5A (Ta) 100 mOhm @ 1.5A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
STN4NF06L	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	60V	4A (Tc)	100 mOhm @ 1.5A, 10V	2.8V @ 250µA	9nC @ 5V	340pF @ 25V	3.3W	Surface Mount	TO-261-4, TO-261AA
STN3NF06	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	60V	4A (Tc)	100 mOhm @ 1.5A, 10V	4V @ 250µA	13nC @ 10V	315pF @ 25V	3.3W	Surface Mount	TO-261-4, TO-261AA
STN3NF06L	STMICROELECTRONICS	MOSFET N-Channel, Metal Oxide	60V	4A (Tc)	100 mOhm @ 1.5A, 10V	2.8V @ 250µA	9nC @ 5V	340pF @ 25V	3.3W	Surface Mount	TO-261-4, TO-261AA
IRFD024PBF	VISHAY SILICONIX	MOSFET N-Channel, Metal Oxide	60V	2.5A (Ta)	100 mOhm @ 1.5A, 10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	1.3W	Through Hole	4-DIP (0.300", 7.62mm)
IRFD024	VISHAY SILICONIX	MOSFET N-Channel, Metal Oxide	60V	2.5A (Ta)	100 mOhm @ 1.5A, 10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	1.3W	Through Hole	4-DIP (0.300", 7.62mm)

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