| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDB070AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 80A | 7 mOhm @ 80A, 10V | 4V @ 250µA | 66nC @ 10V | 3000pF @ 25V | 175W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FDB050AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 80A | 5 mOhm @ 80A, 10V | 4V @ 250µA | 80nC @ 10V | 3900pF @ 25V | 245W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB054N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A | 5.4 mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 115W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB049N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A | 4.7 mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | 8400pF @ 30V | 115W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| RJK0603DPN-E0#T2 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 80A | 5.2 mOhm @ 40A, 10V | - | 57nC @ 10V | 4150pF @ 10V | 125W | Through Hole | TO-220-3 |
© 2016 Copyright
