60V,Drain to Source Voltage (Vdss)
7A (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQP7P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 7A (Tc) 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V 295pF @ 25V 45W Through Hole TO-220-3
FQI7P06TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 7A (Tc) 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V 295pF @ 25V 3.75W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQB7P06TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 7A (Tc) 410 mOhm @ 3.5A, 10V 4V @ 250µA 8.2nC @ 10V 295pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SLA5065 SANKEN ELECTRIC CO LTD
4 N-Channel (Half Bridge) 60V 7A (Tc) 100 mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 4.8W Through Hole 15-SIP, Exposed Tab, Formed Leads
SLA5068 SANKEN ELECTRIC CO LTD
6 N-Channel (3-Phase Bridge) 60V 7A (Tc) 100 mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 5W Through Hole 15-SIP, Exposed Tab, Formed Leads
SQ3426EEV-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 7A (Tc) 42 mOhm @ 5A, 10V 2.5V @ 250µA 12nC @ 4.5V 700pF @ 30V 5W Surface Mount SC-74, SOT-457
SQ4946AEY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 60V 7A (Tc) 40 mOhm @ 4.5A, 10V 2.5V @ 250µA 18nC @ 10V 750pF @ 25V 4W Surface Mount 8-SOIC (0.154", 3.90mm Width)