60V,Drain to Source Voltage (Vdss)
6A (Ta),Current - Continuous Drain (Id) @ 25°C
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN6068LK3-13 DIODES INC
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 68 mOhm @ 12A, 10V 3V @ 250µA 10.3nC @ 10V 502pF @ 30V 2.12W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
CPH6442-TL-E ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 43 mOhm @ 3A, 10V - 20nC @ 10V 1040pF @ 20V 1.6W Surface Mount SOT-23-6 Thin, TSOT-23-6
NVTFS5116PLTAG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 6A (Ta) 52 mOhm @ 7A, 10V 3V @ 250µA 25nC @ 10V 1258pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
AON2260 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 44 mOhm @ 6A, 10V 2.5V @ 250µA 12nC @ 10V 426pF @ 30V 2.8W Surface Mount 6-UDFN Exposed Pad
EPC1009 EPCOS AG
GaNFET N-Channel, Gallium Nitride 60V 6A (Ta) 30 mOhm @ 6A, 5V 2.5V @ 1.2mA 2.4nC @ 5V 196pF @ 30V - Surface Mount Die
NVTFS5116PLTWG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 6A (Ta) 52 mOhm @ 7A, 10V 3V @ 250µA 25nC @ 10V 1258pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
GKI06259 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 21 mOhm @ 12.5A, 10V 2.5V @ 250µA 16nC @ 10V 1050pF @ 25V 3.1W Surface Mount 8-TDFN Exposed Pad
FSS275-TL-E SANYO SEMICONDUCTOR CO LTD
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 43 mOhm @ 3A, 10V - 21nC @ 10V 1100pF @ 20V 1.9W Surface Mount 8-SOIC (0.173", 4.40mm Width)
SI7120ADN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 21 mOhm @ 9.5A, 10V 3V @ 250µA 45nC @ 10V - 1.5W Surface Mount PowerPAK® 1212-8
SI4850EY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 6A (Ta) 22 mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V - 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)