| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVB60N06T4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 60A | 14 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | 2.4W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FD6M045N06 | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Dual) | 60V | 60A | 4.5 mOhm @ 40A, 10V | 4V @ 250µA | 87nC @ 10V | 3890pF @ 25V | - | Through Hole | EPM15 | |
| SIR662DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 60A | 2.7 mOhm @ 20A, 10V | 2.5V @ 250µA | 96nC @ 10V | 4390pF @ 30V | 104W | Surface Mount | PowerPAK® SO-8 |
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