60V,Drain to Source Voltage (Vdss)
56A (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFU1018EPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
IRFR1018EPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR1018E INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1018ETRRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR1018ETRL INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1018ETRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQM60N06-15-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 56A (Tc) 15 mOhm @ 30A, 10V 3.5V @ 250µA 50nC @ 10V 2480pF @ 25V 107W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB