| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQB50N06TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FQP50N06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 120W | Through Hole | TO-220-3 | |
| IPD079N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 7.9 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 79W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPB090N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 9 mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | 71W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB081N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 8.1 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 79W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BSC076N06NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 7.6 mOhm @ 50A, 10V | 4V @ 35µA | 50nC @ 10V | 4000pF @ 30V | 69W | Surface Mount | 8-PowerTDFN | |
| IPD088N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 8.8 mOhm @ 50A, 10V | 4V @ 34µA | 48nC @ 10V | 3900pF @ 30V | 71W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| PSMN015-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 50A | 14.8 mOhm @ 15A, 10V | 4V @ 1mA | 20.9nC @ 10V | 1220pF @ 30V | 86W | Through Hole | TO-220-3 | |
| CSD18537NKCS | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 60V | 50A | 14 mOhm @ 25A, 10V | 3.5V @ 250µA | 18nC @ 10V | 1480pF @ 30V | 79W | Through Hole | TO-220-3 | |
| TK50E06K3A,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | 104W | Through Hole | TO-220-3 |
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