| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP5680 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 40A (Tc) | 20 mOhm @ 20A, 10V | 4V @ 250µA | 46nC @ 10V | 1850pF @ 25V | 65W | Through Hole | TO-220-3 | |
| PSMN014-60LS,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 40A (Tc) | 14 mOhm @ 10A, 10V | 4V @ 1mA | 19.6nC @ 10V | 1264pF @ 30V | 65W | Surface Mount | 8-VDFN Exposed Pad | |
| SIS862DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 40A (Tc) | 8.5 mOhm @ 20A, 10V | 2.6V @ 250µA | 32nC @ 10V | 1320pF @ 30V | 52W | Surface Mount | PowerPAK® 1212-8 | |
| SQD40N06-14L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 40A (Tc) | 14 mOhm @ 20A, 10V | 2.5V @ 250µA | 51nC @ 10V | 2105pF @ 25V | 75W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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