| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP30N06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 30A | 40 mOhm @ 15A, 10V | 4V @ 250µA | 25nC @ 10V | 945pF @ 25V | 79W | Through Hole | TO-220-3 | |
| FQPF47P06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 30A | 26 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 62W | Through Hole | TO-220-3 Full Pack | |
| SPD30P06P G | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 60V | 30A | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 125W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPB230N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 30A | 23 mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | 1600pF @ 30V | 36W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NVD5413NT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 30A | 26 mOhm @ 20A, 10V | 4V @ 250µA | 46nC @ 10V | 1725pF @ 25V | 68W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| N0600N-S17-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 30A | 36 mOhm @ 15A, 4.5V | - | 29.8nC @ 10V | 1380pF @ 10V | 2W | Through Hole | TO-220-3 Isolated Tab | |
| RJK0659DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 30A | 8 mOhm @ 15A, 10V | - | 30.6nC @ 10V | 2400pF @ 10V | 55W | Surface Mount | 8-WFDFN Exposed Pad | |
| SQD40N06-25L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 30A | 22 mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | 1800pF @ 25V | 1.4W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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