60V,Drain to Source Voltage (Vdss)
29A (Tc),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
HUF76419S3ST_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28.5nC @ 10V 870pF @ 25V 100W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF76419P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Through Hole TO-220-3
HUFA76419P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Through Hole TO-220-3
HUFA76419S3S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF76419S3S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF76419S3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUFA76419S3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 25V 75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD350N06L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 35 mOhm @ 29A, 10V 2V @ 28µA 13nC @ 5V 800pF @ 30V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN030-60YS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 29A (Tc) 24.7 mOhm @ 15A, 10V 4V @ 1mA 13nC @ 10V 686pF @ 30V 56W Surface Mount SC-100, SOT-669, 4-LFPAK