Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC1005 | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 60V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 790pF @ 30V | - | Surface Mount | Die | |
ATP113-TL-H | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 60V | 25A (Ta) | 29.5 mOhm @ 18A, 10V | - | 55nC @ 10V | 2400pF @ 20V | 50W | Surface Mount | ATPAK (2 leads+tab) | |
RJK0651DPB-00#J5 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A (Ta) | 14 mOhm @ 12.5A, 10V | - | 15nC @ 4.5V | 2030pF @ 10V | 45W | Surface Mount | SC-100, SOT-669 | |
TPCA8016-H(TE12LQM | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A (Ta) | 21 mOhm @ 13A, 10V | 2.3V @ 1mA | 22nC @ 10V | 1375pF @ 10V | 45W | Surface Mount | 8-PowerVDFN |