| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ATP112-TL-H | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 60V | 25A | 43 mOhm @ 13A, 10V | - | 33.5nC @ 10V | 1450pF @ 20V | 40W | Surface Mount | ATPAK (2 leads+tab) | |
| TK25E06K3,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | 60W | Through Hole | TO-220-3 | |
| RJK0658DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A | 11.1 mOhm @ 12.5A, 10V | - | 19.4nC @ 10V | 1580pF @ 10V | 50W | Surface Mount | 8-WFDFN Exposed Pad |
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