60V,Drain to Source Voltage (Vdss)
23A (Tc),Current - Continuous Drain (Id) @ 25°C
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STF40NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 28 mOhm @ 11.5A, 10V 4V @ 250µA 32nC @ 10V 920pF @ 25V 30W Through Hole TO-220-3 Full Pack
HUFA76413P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 49 mOhm @ 23A, 10V 3V @ 250µA 20nC @ 10V 645pF @ 25V 60W Through Hole TO-220-3
MTP23P06V ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 23A (Tc) 120 mOhm @ 11.5A, 10V 4V @ 250µA 50nC @ 10V 1620pF @ 25V 90W Through Hole TO-220-3
MTP23P06VG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 23A (Tc) 120 mOhm @ 11.5A, 10V 4V @ 250µA 50nC @ 10V 1620pF @ 25V 90W Through Hole TO-220-3
NP23N06YDG-E1-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 27 mOhm @ 11.5A, 10V 2.5V @ 250µA 41nC @ 10V 1800pF @ 25V 1W Surface Mount 8-SMD, Flat Lead Exposed Pad
SUD23N06-31L-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 31 mOhm @ 15A, 10V 3V @ 250µA 17nC @ 10V 670pF @ 25V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD23N06-31L-T4-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 31 mOhm @ 15A, 10V 3V @ 250µA 17nC @ 10V 670pF @ 25V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQD23N06-31L-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 23A (Tc) 31 mOhm @ 15A, 10V 2.5V @ 250µA 24nC @ 10V 845pF @ 25V 37W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63