| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NDT2955 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 2.5A (Ta) | 300 mOhm @ 2.5A, 10V | 4V @ 250µA | 15nC @ 10V | 601pF @ 30V | 1.1W | Surface Mount | TO-261-4, TO-261AA | |
| SSM3K318T,LF | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | - | 7nC @ 10V | 235pF @ 30V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SSM3K318T(T5L,F,T) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 700mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| IRFD024PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFD024 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRLD024 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRLD024PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) |
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