| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB019N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 120A | 1.9 mOhm @ 100A, 10V | 2.2V @ 196µA | 166nC @ 4.5V | 28000pF @ 30V | 250W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB029N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 120A | 2.9 mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | 188W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NVB5426NT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 120A | 6 mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | 215W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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