60V,Drain to Source Voltage (Vdss)
1.8A (Ta),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTGS5120PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 1.8A (Ta) 111 mOhm @ 2.9A, 10V 3V @ 250µA 18.1nC @ 10V 942pF @ 30V 600mW Surface Mount SC-74, SOT-457
SFM9014TF FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 1.8A (Ta) 500 mOhm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 350pF @ 25V 2.8W Surface Mount TO-261-4, TO-261AA
BSP295E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP295E6327T INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP295 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 1.8A (Ta) 300 mOhm @ 1.8A, 10V 1.8V @ 400µA 17nC @ 10V 368pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
CPH3351-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 1.8A (Ta) 250 mOhm @ 1A, 10V - 6nC @ 10V 262pF @ 20V 1W Surface Mount SC-96