| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK100E06N1,S1X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 255W | Through Hole | TO-220-3 | |
| PSMN2R6-60PSQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 150A (Tmb) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | 7629pF @ 25V | 326W | Through Hole | TO-220-3 | |
| STP80NE06-10 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 140nC @ 10V | 10000pF @ 25V | 150W | Through Hole | TO-220-3 |
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