60V,Drain to Source Voltage (Vdss)
130nC @ 10V,Gate Charge (Qg) @ Vgs
TO-220-3,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF1010EPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 200W Through Hole TO-220-3
PSMN3R0-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 306W Through Hole TO-220-3
NTP75N06 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 75A (Ta) 9.5 mOhm @ 37.5A, 10V 4V @ 250µA 130nC @ 10V 4510pF @ 25V 214W Through Hole TO-220-3
NTP75N06G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 75A (Ta) 9.5 mOhm @ 37.5A, 10V 4V @ 250µA 130nC @ 10V 4510pF @ 25V 2.4W Through Hole TO-220-3
NTP5411NG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 10 mOhm @ 40A, 10V 4V @ 250µA 130nC @ 10V 4500pF @ 25V 166W Through Hole TO-220-3