Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF1010EPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 200W | Through Hole | TO-220-3 | |
PSMN3R0-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 306W | Through Hole | TO-220-3 | |
NTP75N06 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 75A (Ta) | 9.5 mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | 214W | Through Hole | TO-220-3 | |
NTP75N06G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 75A (Ta) | 9.5 mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | 2.4W | Through Hole | TO-220-3 | |
NTP5411NG | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 130nC @ 10V | 4500pF @ 25V | 166W | Through Hole | TO-220-3 |