560V,Drain to Source Voltage (Vdss)
3.9V @ 500µA,Vgs(th) (Max) @ Id
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPP12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 125W Through Hole TO-220-3
SPB12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPA12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 33W Through Hole TO-220-3 Full Pack
SPI12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 33W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SPW12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 125W Through Hole TO-247-3