560V,Drain to Source Voltage (Vdss)
TO-220-3,Package / Case
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPP12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 125W Through Hole TO-220-3
SPP21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Through Hole TO-220-3
SPP08N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 83W Through Hole TO-220-3
SPP16N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 160W Through Hole TO-220-3
SPP04N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 50W Through Hole TO-220-3
IPP50R399CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 9A (Tc) 399 mOhm @ 4.9A, 10V 3.5V @ 330µA 23nC @ 10V 890pF @ 100V 83W Through Hole TO-220-3