450V,Drain to Source Voltage (Vdss)
45nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK19A45D(STA4,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 450V 19A (Ta) 250 mOhm @ 9.5A, 10V 4V @ 1mA 45nC @ 10V 2600pF @ 25V 50W Through Hole TO-220-3 Full Pack
IRF734 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 450V 4.9A (Tc) 1.2 Ohm @ 2.9A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 74W Through Hole TO-220-3
IRFI734G VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 450V 3.4A (Tc) 1.2 Ohm @ 2A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 35W Through Hole TO-220-3 Full Pack, Isolated Tab
IRF734L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 450V 4.9A (Tc) 1.2 Ohm @ 2.9A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 74W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF734PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 450V 4.9A (Tc) 1.2 Ohm @ 2.9A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 74W Through Hole TO-220-3
IRFI734GPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 450V 3.4A (Tc) 1.2 Ohm @ 2A, 10V 4V @ 250µA 45nC @ 10V 680pF @ 25V 35W Through Hole TO-220-3 Full Pack, Isolated Tab