30V,Drain to Source Voltage (Vdss)
88W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPD80P03P4L-07 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 30V 80A (Tc) 6.8 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 88W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80P03P4L-07 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 30V 80A (Tc) 6.9 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 88W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI80P03P4L-07 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 30V 80A (Tc) 7.2 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 88W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80P03P4L-07 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 30V 80A (Tc) 7.2 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 88W Through Hole TO-220-3
PSMN2R5-30YL,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 2.4 mOhm @ 15A, 10V 2.15V @ 1mA 57nC @ 10V 3468pF @ 12V 88W Surface Mount SC-100, SOT-669, 4-LFPAK
PH2530AL,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 2.4 mOhm @ 15A, 10V 2.15V @ 1mA 57nC @ 10V 3468pF @ 12V 88W Surface Mount SC-100, SOT-669, 4-LFPAK
PSMN3R0-30MLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 70A (Tmb) 4.05 mOhm @ 25A, 4.5V 2.15V @ 1mA 34.8nC @ 10V 2330pF @ 15V 88W Surface Mount SOT1210, 8-LFPAK33 (5-Lead)
SUD50N03-06P-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 84A (Tc) 6.5 mOhm @ 20A, 10V 3V @ 250µA 30nC @ 4.5V 3100pF @ 25V 88W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUP45N03-13L-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 45A (Tc) 13 mOhm @ 45A, 10V 3V @ 250µA 70nC @ 10V 2730pF @ 25V 88W Through Hole TO-220-3